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| 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS 60V RDS(ON) (max) 5.0 ID(ON) (min) 75mA Order Number / Package TO-92 2N7000 Features s Free from secondary breakdown s Low power drive requirement s Ease of paralleling s Low CISS and fast switching speeds s Excellent thermal stability s Integral Source-Drain diode s High input impedance and high gain s Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications s Motor controls s Converters s Amplifiers s Switches s Power supply circuits s Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. BVDSS BVDGS 30V -55C to +150C 300C SGD TO-92 7-5 2N7000 Thermal Characteristics Package TO-92 ID (continuous)* 200mA ID (pulsed) 500mA Power Dissipation @ TC = 25C 1W C/W 125 jc C/W 170 ja IDR* 200mA IDRM 500mA * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current Min 60 0.8 3.0 10 1 1 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS t(ON) t(OFF) VSD ON-State Drain Current Static Drain-to-Source ON-State Resistance Static Drain-to-Source ON-State Resistance Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Time Turn-OFF Time Diode Forward Voltage Drop 0.85 100 60 25 5 10 10 V ns VDD = 15V, ID = 0.5A, RGEN = 25 ISD = 0.2A, VGS = 0V pF VGS = 0V, VDS = 25V f = 1 MHz 75 5.3 5.0 Typ Max Unit V V nA A mA mA m Conditions ID = 10A, VGS = 0V VGS = VDS, ID = 1mA VGS = 15V, VDS = 0V VGS = 0V, VDS = 48V VGS = 0V, VDS = 48V TA = 125C VGS = 4.5V, VDS = 10V VGS = 4.5V, ID = 75mA VGS = 10V, ID = 0.5A VDS = 10V, ID = 0.2A Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL PULSE GENERATOR Rgen OUTPUT 10V 90% INPUT 0V 10% t(ON) td(ON) VDD OUTPUT 0V 90% 90% tr t(OFF) td(OFF) tF D.U.T. 10% 10% INPUT 7-6 2N7000 Typical Performance Curves Output Characteristics 2.5 VGS =10V 8V 2.5 Saturation Characteristics VGS = 10V 2.0 8V 2.0 ID (amperes) ID (amperes) 1.5 6V 1.0 1.5 6V 1.0 0.5 4V 0.5 4V 0 0 10 20 30 40 50 0 0 2 4 6 8 10 VDS (volts) Transconductance vs. Drain Current 1.0 2.0 VDS (volts) Power Dissipation vs. Case Temperature 0.8 VDS = 25V GFS (siemens) PD (watts) 0.6 TO-92 1.0 TA = -55C 0.4 25C 125C 0.2 0 0 0.2 0.4 0.6 0.8 1.0 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area 1.0 1.0 TO-92 (pulsed) TO-92 (DC) TC (C) Thermal Response Characteristics Thermal Resistance (normalized) 0.8 ID (amperes) 0.1 0.6 0.4 0.01 0.2 0.001 TC = 25C 0.1 1.0 10 100 TO-92 PD = 1W TC = 25C 0.01 0.1 1 10 0 0.001 VDS (volts) tp (seconds) 7-7 2N7000 Typical Performance Curves BVDSS Variation with Temperature 5.0 1.1 4.0 On-Resistance vs. Drain Current VGS = 4.5V BVDSS (normalized) RDS(ON) (ohms) 3.0 VGS = 10V 1.0 2.0 1.0 0.9 0 -50 0 50 100 150 0 0.5 1.0 1.5 2.0 2.5 Tj (C) Transfer Characteristics 2.5 1.6 ID (amperes) V(th) and RDS Variation with Temperature 1.9 VDS = 25V 2.0 25C 1.5 1.2 1.3 125C 1.0 V(th) @ 1mA 1.0 1.0 0.5 0.8 0.7 0 0 2 4 6 8 10 0.6 -50 0 50 100 0.4 150 VGS (volts) Capacitance vs. Drain-to-Source Voltage 100 10 Tj(C) Gate Drive Dynamic Characteristics f = 1MHz 8 75 VDS = 10V 40V C (picofarads) VGS (volts) 6 50 80 pF 4 CISS 25 COSS CRSS 2 40 pF 0 40 0 0.2 0.4 0.6 0.8 1.0 0 0 10 20 30 VDS (volts) QG (nanocoulombs) 7-8 RDS(ON) (normalized) TA = -55C 1.4 1.6 VGS(th) (normalized) RDS @ 10V, 1.0A ID (amperes) |
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